The 600MHz-700MHz 50W GaN RF Signal Jammer Module with Power Amplifier and Circulator offers exceptional performance for jamming signals in critical communication ranges. This module is equipped with a high-efficiency GaN (Gallium Nitride) chip, which provides significant advantages over traditional LDMOS technology. Key benefits include superior work efficiency, enhanced heat dissipation due to its ceramic tube shell, and increased stability in operation. Additionally, the GaN chip is designed to avoid damage in an open-circuit state, ensuring long-term reliability.

The module comes with a range of power output options, including 10W, 20W, 30W, 40W, 50W, and 60W, allowing users to select the optimal power level for their specific needs. This flexibility ensures that the module can deliver effective jamming over varying distances, providing comprehensive coverage for applications in security, defense, and communications disruption.

The integration of the power amplifier and circulator ensures robust signal transmission, with improved performance in challenging environments. Whether deployed in military operations, law enforcement, or other sensitive applications, this GaN-based RF Signal Jammer Module offers a powerful, reliable, and efficient solution for disrupting unwanted signals and maintaining operational security.

Number	Items	Specifications
1	Frequency Range	600-700MHz
2	Operating Voltage	28V
3	Flatness	±0.5dB
4	Output Power	47dBm
5	Current	4.30A @28V, 47dBm
6	Efficiency	45%@47dBm
7	LED State	Red
8	Operating Temperature	-30℃～85℃
9	Storage Temperature	-40℃～150℃
10	Operating Humidity	＜95%RH
11	RF PORT	Output: SMA-F
12	Power Socket	15cm red/black wire
13	Shell Material	Aluminum
14	Shell Size	1315317mm
15	Net Weight	0.25Kg

1. 28V /5A power supply;

2. Heat dissipation is recommended, such as adding heat sink or radiator fan;

3. Antenna should be screwed first, then plug the power adapter.

Sweep Signal Source*1